即決 J310パラレル 1～30MHz HF帯広帯域 プリアンプキット ゲート接地 受信アンプ 短波帯用 J-FET 2sk125と同等の性能 即決 1,600円 送料無料. Genuine Vishay Siliconix - J310 - Transistor, N Channel FET. Max voltage: 25V. Max current: 10mA. Dissipation: 625mW. Vintage New Old Stock.
Type Designator: J310
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 25 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: -2 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 50 Ohm
Package: TO92
J310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J310 Datasheet (PDF)
Nokia app for mac. 0.1. mmbfj309 mmbfj310.pdf Size:165K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1N Channel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATING
0.2. pmbfj308 pmbfj309 pmbfj310 2.pdf Size:68K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE
0.3. j308-j309-j310.pdf Size:96K _philips
DISCRETE SEMICONDUCTORSDATA SHEETJ308; J309; J310N-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J308; J309; J310FEATURES PINNING - TO-92 Low noisePIN SYMBOL DESCRIPTION Interchangea
0.4. mmbfj310.pdf Size:152K _fairchild_semi
J309 MMBFJ309J310 MMBFJ310GSG TO-92S SOT-23NOTE: Source & DrainDD are interchangeableMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise noted
0.5. j310.pdf Size:561K _fairchild_semi
Mac os x for power mac g5. Discrete POWER & SignalTechnologiesJ309 MMBFJ309J310 MMBFJ310GDG TO-92S SOT-23 SDMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbo
0.6. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi
December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309
0.7. j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf Size:96K _vishay
J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10
0.8. cmpfj310.pdf Size:49K _central
0.9. j309g j310g.pdf Size:66K _onsemi
Poser 2014 for mac. J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/
0.10. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi
MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31
0.11. smmbfj310lt1g smmbfj310lt3g.pdf Size:101K _onsemi
MMBFJ309L, MMBFJ310L,SMMBFJ310LJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andGATEPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1 DRAINCo
0.12. j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf Size:98K _siliconix
J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12
Datasheet: FW274, FW282, FW707, FW811, FW812, FW813, FW906, FW907, IRF730, MCH3374, MCH3377, MCH3383, MCH3475, MCH3477, MCH3484, MCH6320, MCH6321.
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J310 Datasheet Pdf
JFET in the preamp was dead when I bought it so have been using with the
preamp off. I really need to compensate for cable losses between the rig
and linear so want to repair the preamp. I have some plastic J310 JFETs but
U310s are scarce. As these are now very old devices, around 40 years old,
is there a more recent alternative? I don't want to radically alter the
grounded gate circuit so would have to be a 'drop in' replacement.
If all else fails will the plastic J310 work as well as the metal U310?
I've only ever used these devices on HF before so not sure how touchy they
are on 2M.
Dick